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Job description
Principal Photonic Device Design Engineer
Compensation: $150,000 - $202,000 base salary with a 16% target annual bonus
Benefits: Comprehensive medical, dental, vision, 401(k), annual bonus, relocation assistance, and comprehensive employee benefits package
Work Authorization: Qualified candidates requiring a TN-1 visa or H-1B transfer are encouraged to apply. New H-1B sponsorship is not available for this opportunity.
Position Summary
A global leader in optical communications technology is seeking a Principal Design Engineer to lead the design and development of next‑generation high‑speed InGaAs/Indium Phosphide (InP) photodiodes used in advanced optical communication and sensing applications.
This is a highly technical individual contributor role focused on photodiode architecture, device simulation, wafer process development, characterization, and product qualification. Working alongside world‑class engineers, you’ll drive innovation from concept through production while helping develop the next generation of optoelectronic devices that power AI infrastructure, high‑speed networking, and advanced photonic technologies.
The ideal candidate combines deep technical expertise with a passion for innovation and enjoys solving complex semiconductor design challenges in a collaborative R&D environment.
Key Responsibilities
Lead the design and development of high-speed, high-sensitivity InGaAs/InP photodiodes from concept through production
Define device architectures and performance targets to meet customer and market requirements
Partner with epitaxial growth, process integration, and wafer fabrication teams to optimize device structures and manufacturing processes
Perform device simulation, characterization, and failure analysis to improve speed, sensitivity, reliability, and manufacturability
Support product qualification, reliability testing, and new product introduction activities
Collaborate with product engineering teams on yield improvement and continuous process optimization
Mentor engineers and provide technical leadership across multidisciplinary development teams
Stay current on emerging photonic technologies and identify opportunities for future product innovation
Required Qualifications
Ph.D. in Electrical Engineering, Physics, Materials Science, or a related discipline
10+ years of experience designing InP or GaAs photodiodes
Strong background in optoelectronic device simulation and design
Experience with InP or GaAs wafer processing and semiconductor fabrication
Hands‑on experience with photodiode characterization, reliability testing, and product qualification
Strong understanding of semiconductor device physics and optoelectronic materials
Excellent analytical, troubleshooting, and cross‑functional communication skills
Ability to lead technical projects from concept through production
Preferred Qualifications
Experience designing other InP optoelectronic devices such as laser diodes
Experience supporting semiconductor process integration and yield improvement initiatives
Background working with contract manufacturing partners
Experience performing device failure analysis and reliability investigations
Previous technical leadership or mentoring experience
Experience developing products for optical communications or photonics applications
Why This Opportunity
Opportunity to lead the development of next‑generation photodiode technology
Work alongside globally recognized experts in photonics and semiconductor device engineering
Join a growing business with significant investment in advanced optical technologies
Highly visible technical leadership role with opportunities to influence future product direction
Potential path into engineering management or broader technical leadership
Collaborative culture that encourages innovation, ownership, and continuous learning
Relocation assistance and a competitive compensation package including annual bonus
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Worksite address
fremont, CA, 94537, US
Who can apply
Review the original listing for work authorization, qualifications and employer requirements.